RF Embedded Engineer for Ultrasound Experiments

Job ID: 40584681

Budget: $750 – $1,500 USD

We are seeking an experienced RF/Embedded Hardware Engineer to design a custom printed circuit board (PCB) and accompanying firmware to drive a high-power piezoelectric transducer for transcranial focused ultrasound experiments. The system must generate, amplify, and automatically tune a 500 kHz signal into a highly capacitive, low-impedance acoustic load.

The Load (Transducer Specifications)
The system must be designed specifically to drive the following piezoelectric transducer:

Material: SM411

Operating Mode: Thickness mode vibration

Resonant Frequency (fr): 500 kHz ± 10 kHz

Static Capacitance (Cs): 3800 pF ± 20% (measured at 1 kHz, 1 Vrms)

Resonant Impedance (Zm): ≤ 7.6 Ω

Dielectric Loss (Tan∂): 1.5%

Note: At 500 kHz, the capacitive reactance is approximately -83.8 Ω. The matching network must cancel this reactance and transform the amplifier's output impedance down to the 7.6 Ω real load.

System Architecture & Requirements

Digital Control & Signal Generation:

STM32 series MCU capable of high-speed ADC sampling and fast SPI.

Direct Digital Synthesizer (DDS) IC (e.g., AD9959) to generate a precise, sweepable sine wave around the 500 kHz target.

Burst/Pulse envelope control (via VGA like AD8331 or fast RF switching).

Appropriate Low-Pass Filtering (e.g., 2 MHz cutoff) post-DDS.

RF Power Amplification:

Class-D or Class-E amplifier topology utilizing high-speed RF MOSFETs.

High-current RF gate drivers to minimize switching losses.

Target Output: Scalable design capable of 20W to 50W peak burst power.

Adequate thermal management/heatsinking for the switching devices.

Impedance Matching Network:

L-network or π-network utilizing high-power, high-Q components (air-core/ferrite power inductors and high-voltage RF capacitors like Mica/C0G) to withstand high circulating currents.

Feedback & Automatic Resonance Tracking:

Directional coupler and/or V/I sensing transformers on the output stage.

RF phase/gain detector IC (e.g., AD8302) to measure the phase angle between Voltage and Current.

The MCU must read this phase data and continuously adjust the DDS frequency via a control loop to maintain a zero-degree phase shift as the piezo heats up and drifts.

PC Interfacing:

USB/UART connection providing a basic command protocol (Set Frequency, Start/Stop Burst, Set PRF) and telemetry readout (Power, Frequency, Phase Error).

Required Deliverables

Schematic Capture: Complete source files (Altium or KiCad preferred) and PDF.

PCB Layout: Source files, Gerbers, NC Drill files, assembly drawings. Must adhere to RF layout best practices.

Bill of Materials (BOM): Complete list with exact manufacturer part numbers.

Firmware: Well-commented C/C++ source code for the STM32, including the phase-tracking loop and PC protocol.

Design Brief: A short write-up explaining the matching network calculations.

Ideal Candidate

Proven experience in RF Power Amplifier design (Class-D/E in the kHz/MHz range).

Experience designing Impedance Matching Networks for highly reactive loads.

Strong embedded C programming skills for closed-loop control systems.

TO APPLY (Please read carefully):
In the first line of your proposal, please answer the following screening question:
What is your experience with matching highly capacitive loads (like a 3800pF piezo) at RF frequencies, and how would you approach the impedance matching for this specific project? Proposals that do not answer this question will be automatically declined.