2D/3D TFET TCAD Simulation
Budget: ₹1,500 – ₹12,500 INR
I would like a full TFET study carried out in Cogenda Visual TCAD that covers both 2-D and 3-D device representations. My end goal is to arrive at a structure—and a small demonstration circuit—whose operating point clearly illustrates ultra-low power consumption.
Here’s what I need from you:
• Build the TFET geometry in the tool, choose appropriate materials and doping profiles, then sweep critical design parameters until the device meets a low-power operating target (sub-threshold swing and leakage will be the key figures I’ll look at).
• Run complete electrical simulations in 2-D first, then extend the validated setup to 3-D so I can compare dimensional effects.
• Supply all Cogenda project files, meshes, command scripts, and export any plots of I-V curves or energy band diagrams that you generate.
• Summarise the methodology and findings in a concise report so I can reproduce or modify the work later.
I already have Visual TCAD installed, so if you keep the workflow native to the software—using the built-in mesh generator, solver settings, and visualisation tools—I will be able to verify everything quickly.
Acceptance criteria
– 2-D and 3-D simulation files open without errors in the current release of Cogenda Visual TCAD.
– Report shows at least one TFET operating point that achieves noticeably lower static power than an equivalently sized MOSFET baseline.
– All key steps (geometry, meshing, physics models, bias conditions) are documented.
If this is clear and feasible for you, let me know how soon you can deliver the initial 2-D results so we can iterate.
Here’s what I need from you:
• Build the TFET geometry in the tool, choose appropriate materials and doping profiles, then sweep critical design parameters until the device meets a low-power operating target (sub-threshold swing and leakage will be the key figures I’ll look at).
• Run complete electrical simulations in 2-D first, then extend the validated setup to 3-D so I can compare dimensional effects.
• Supply all Cogenda project files, meshes, command scripts, and export any plots of I-V curves or energy band diagrams that you generate.
• Summarise the methodology and findings in a concise report so I can reproduce or modify the work later.
I already have Visual TCAD installed, so if you keep the workflow native to the software—using the built-in mesh generator, solver settings, and visualisation tools—I will be able to verify everything quickly.
Acceptance criteria
– 2-D and 3-D simulation files open without errors in the current release of Cogenda Visual TCAD.
– Report shows at least one TFET operating point that achieves noticeably lower static power than an equivalently sized MOSFET baseline.
– All key steps (geometry, meshing, physics models, bias conditions) are documented.
If this is clear and feasible for you, let me know how soon you can deliver the initial 2-D results so we can iterate.